Wide Band-Gap II-VI Compound Semiconductor Grown by MOCVD and its Application to Blue Laser Diodes
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Date
1996-03
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Citation of Original Publication
Chen Dr. J. C., Wide Band-Gap II-VI Compound Semiconductor Grown by MOCVD and its Application to Blue Laser Diodes, https://apps.dtic.mil/sti/pdfs/ADA313681.pdf
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This is a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.
Public Domain Mark 1.0
This is a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.
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Abstract
We have spent a great deal of effect in GaN as well as in ZnSe due to the rapid and more prom1smg development of GaN recently. We have performed intenstive material study on GaN, such as DLTS, TSC, photocurrent spectroscopy, and x-ray, to understand its defect nature. The maJor __achievements of last year's work in our laboratory can be summarized as follows.
(1)We are the first group to observe the transferred-electron effect in GaN. We observed a negative differential resistivity (NOR) in GaN under high electric field. The threshold electrical field was found to be around l.9lxl05 V/cm. The NDR of GaN can be used in the application of high-temperature Gunn diodes. (2)We have performed a systematic studies on GaN M-S-M ultraviolet detectors made from GaN grown by MOCVD under different NH3 flow rates. We have found that a 0.62 eV deep trap which
was attbuted to gallium antisites or nitrogen vacancy-related defects was responsible for the low respons1v1ty _and the slow response time in GaN UV detectors. In addition, this 0.62 eV level can be effectively reduced by increasing the NH3 flow rate during the MOCVD growth. As a result, a high-performne UV etector was fabricated on GaN of the lowest 0.62 eV trap. This detector has a respons1v1ty as high as 3200 A/W under 5 V at a wavelength of 365 nm and improved response times in the sub-milliseconds range.