Phase locked harmonic localization and enhancement in an absorbing semiconductor cavity

Author/Creator ORCID

Date

2010-05-17

Department

Program

Citation of Original Publication

Roppo, V.; et al.; Phase locked harmonic localization and enhancement in an absorbing semiconductor cavity; Proceedings Volume 7469, ROMOPTO 2009: Ninth Conference on Optics: Micro- to Nanophotonics II; https://www.spiedigitallibrary.org/conference-proceedings-of-spie/7469/74690F/Phase-locked-harmonic-localization-and-enhancement-in-an-absorbing-semiconductor/10.1117/12.867543.short?SSO=1;

Rights

This item is likely protected under Title 17 of the U.S. Copyright Law. Unless on a Creative Commons license, for uses protected by Copyright Law, contact the copyright holder or the author.
Public Domain Mark 1.0
This work was written as part of one of the author's official duties as an Employee of the United States Government and is therefore a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.

Subjects

Abstract

We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650 and 433 nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics resonate inside the cavity and become amplified leading to relatively large conversion efficiencies. Field localization thus plays a pivotal role despite the presence of absorption, and ushers in a new class of semiconductor-based devices in the visible and UV ranges.