Atomic Layer Deposition of TiO2 on Si and GaAs Substrates Using TDMATi and H2O Precursors

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dc.contributor.advisorGougousi, Theodosia
dc.contributor.authorLacis, John W.
dc.contributor.departmentPhysics
dc.contributor.programPhysics, Applied
dc.date.accessioned2015-10-14T03:13:12Z
dc.date.available2015-10-14T03:13:12Z
dc.date.issued2009-01-01
dc.description.abstractAtomic layer deposition involving TDMATi and H<sub>2 sors is used to grow TiO<sub>2 lms in a homemade hot-wall, flowtube reactor. Process optimization and film properties are studied for films grown on Si substrates. Spectroscopic ellipsometry indicates an optimal growth rate at a substrate temperature of 200C. RBS shows a consistent coverage of Ti atoms over a large cycle range. X-ray spectroscopy reveals that the films contain very little bulk contamination and are slightly over-oxidized. FTIR and X-ray diffraction spectra show that as-deposited films are amorphous and form into the rutile crystal structure when they are annealed at 900C. Surface roughness is measured with AFM and is shown to be 3-4% of the film's thickness. Films are grown on GaAs substrates and ex-situ X-ray spectroscopy is used to determine interface properties. Gradual consumption of the native oxides is observed during deposition. After 250 ALD cycles, 26 of native oxide is reduced to less than a monolayer with trace amounts of AsO<sub>x sub>2 ing. The consumption of the oxide is attributed to the presence of dimethylamino ligands in the TDMATi precursor. For GaAs substrates whose native oxides are etched prior to deposition, the oxides are not regrown during deposition.
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dc.genretheses
dc.identifierdoi:10.13016/M2GH39
dc.identifier.other10215
dc.identifier.urihttp://hdl.handle.net/11603/1047
dc.languageen
dc.relation.isAvailableAtThe University of Maryland, Baltimore County (UMBC)
dc.relation.ispartofUMBC Theses and Dissertations Collection
dc.relation.ispartofUMBC Graduate School Collection
dc.relation.ispartofUMBC Student Collection
dc.relation.ispartofUMBC Physics Department Collection
dc.rightsThis item may be protected under Title 17 of the U.S. Copyright Law. It is made available by UMBC for non-commercial research and education. For permission to publish or reproduce, please see http://aok.lib.umbc.edu/specoll/repro.php or contact Special Collections at speccoll(at)umbc.edu.
dc.sourceOriginal File Name: Lacis_umbc_0434M_10215.pdf
dc.subjectatomic layer deposition
dc.subjectgaas
dc.subjectinterface
dc.subjectoxide
dc.subjectthin film
dc.subjecttio2
dc.titleAtomic Layer Deposition of TiO2 on Si and GaAs Substrates Using TDMATi and H2O Precursors
dc.typeText
dcterms.accessRightsAccess limited to the UMBC community. Item may possibly be obtained via Interlibrary Loan through a local library, pending author/copyright holder's permission.

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