Field localization and enhancement of phase-locked second- and third-order harmonic generation in absorbing semiconductor cavities

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dc.contributor.authorRoppo, V.
dc.contributor.authorCojocaru, C.
dc.contributor.authorRaineri, F.
dc.contributor.authorD’Aguanno, G.
dc.contributor.authorTrull, J.
dc.contributor.authorHalioua, Y.
dc.contributor.authorRaj, R.
dc.contributor.authorSagnes, I.
dc.contributor.authorVilaseca, R.
dc.contributor.authorScalora, M.
dc.date.accessioned2020-05-22T19:33:06Z
dc.date.available2020-05-22T19:33:06Z
dc.date.issued2009-10-26
dc.description.abstractWe predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650 and 433 nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics resonate inside the cavity and become amplified leading to relatively large conversion efficiencies. Field localization thus plays a pivotal role despite the presence of absorption, and ushers in a new class of semiconductor-based devices in the visible and uv ranges.en_US
dc.description.sponsorshipWe thank the U.S. Army European Research office for partial financial support project W911NF. G.D. thanks the National Research Council for financial support. V.R., C.C., J.T. and R.V. acknowledge support from the Spanish government through Project No. FIS2008-06024-C03-02/FIS. We also thank Nadia Mattiucci and Mark J. Bloemer for helpful discussions and suggestions.en_US
dc.description.urihttps://journals.aps.org/pra/abstract/10.1103/PhysRevA.80.043834en_US
dc.format.extent6 pagesen_US
dc.genrejournal articlesen_US
dc.identifierdoi:10.13016/m2tiv4-lau4
dc.identifier.citationRoppo, V.; et al.; Field localization and enhancement of phase-locked second- and third-order harmonic generation in absorbing semiconductor cavities; Physical Review A 80, 043834 (2009); https://journals.aps.org/pra/abstract/10.1103/PhysRevA.80.043834en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevA.80.043834
dc.identifier.urihttp://hdl.handle.net/11603/18736
dc.language.isoen_USen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isAvailableAtThe University of Maryland, Baltimore County (UMBC)
dc.relation.ispartofUMBC Computer Science and Electrical Engineering Department Collection
dc.rightsThis item is likely protected under Title 17 of the U.S. Copyright Law. Unless on a Creative Commons license, for uses protected by Copyright Law, contact the copyright holder or the author.
dc.rightsPublic Domain Mark 1.0*
dc.rightsThis work was written as part of one of the author's official duties as an Employee of the United States Government and is therefore a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.
dc.rights.urihttp://creativecommons.org/publicdomain/mark/1.0/*
dc.titleField localization and enhancement of phase-locked second- and third-order harmonic generation in absorbing semiconductor cavitiesen_US
dc.typeTexten_US

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