Mukherjee, BabluTseng, FrankGunlycke, DanielAmara, Kiran KumarEda, GokiSimsek, Ergun2025-06-052025-06-052015-02-01Mukherjee, Bablu, Frank Tseng, Daniel Gunlycke, Kiran Kumar Amara, Goki Eda, and Ergun Simsek. “Complex Electrical Permittivity of the Monolayer Molybdenum Disulfide (MoS₂) in near UV and Visible.” Optical Materials Express 5, no. 2 (February 1, 2015): 447–55. https://doi.org/10.1364/OME.5.000447.https://doi.org/10.1364/OME.5.000447http://hdl.handle.net/11603/38744Temperature and Fermi energy dependent exciton eigenenergies of monolayer molybdenum disulfide (MoS₂) are calculated using an atomistic model. These exciton eigen-energies are used as the resonance frequencies of a hybrid Lorentz-Drude-Gaussian model, in which oscillation strengths and damping coefficients are obtained from the experimental results for the differential transmission and reflection spectra of monolayer MoS₂ coated quartz and silicon substrates, respectively. Numerical results compared to experimental results found in the literature reveal that the developed permittivity model can successfully represent the monolayer MoS₂ under different biasing conditions at different temperatures for the design and simulation of MoS₂ based opto-electronic devices.9 pagesen-USThis work was written as part of one of the author's official duties as an Employee of the United States Government and is therefore a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.Public Domainhttps://creativecommons.org/publicdomain/mark/1.0/Thin filmsPhotoconductivityRed shiftPermittivityReflection coefficientOptical propertiesUMBC Computational Photonics LaboratoryText