Ebadollahi, NikkiNamboodiri, Pradeep N.Pederson, ChristianVeetil, Vijin KizhakeDavanco, Marcelo I.Srinivasan, Kartik A.Katzenmeyer, Aaron M.Pelton, MatthewPomeroy, Joshua M.2025-06-052025-06-052024-11-20Ebadollahi, Nikki, Pradeep N. Namboodiri, Christian Pederson, Vijin K. Veetil, Marcelo I. Davanco, Kartik A. Srinivasan, Aaron M. Katzenmeyer, Matthew Pelton, and Joshua M. Pomeroy. "Fabrication of Silicon W and G Center Embedded Light-Emitting Diodes for Electroluminescence". Journal of Vacuum Science & Technology B 42, no. 6 (20 November 2024): 062208. https://doi.org/10.1116/6.0004055.https://doi.org/10.1116/6.0004055http://hdl.handle.net/11603/38790The need for reliable quantum light sources drives our research to study color centers (CCs) in silicon as telecommunication O-band emitters. Building from photoluminescence measurements, we compare new electroluminescence measurements. To this end, we synthesized CC-embedded p-i-n junctions in silicon, creating CC light-emitting diode devices. The two types of CCs synthesized were G-centers and W-centers, which show zero-phonon lines at approximately 1279 nm and 1218 nm, respectively. Here, we present our device design, fabrication process flow, and report on the device performance results from measurements to date.17 pagesen-USThis work was written as part of one of the author's official duties as an Employee of the United States Government and is therefore a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.Public Domainhttps://creativecommons.org/publicdomain/mark/1.0/PIN diodeCrystallographic defectsElectroluminescencePhotoluminescenceSpectroscopyLight emitting diodesPhotodiodesChemical elementsQuantum informationTelecommunicationsText