Field Effect Transistors Deploying Anisotropic Two-Dimensional Materials for Light Generation and Detection

Simsek, ErgunYuan, MengqingLiu, Qing H.2025-06-052025-06-052018-09-16Simsek, Ergun, Mengqing Yuan, and Qing H. Liu. “Field Effect Transistors Deploying Anisotropic Two-Dimensional Materials for Light Generation and Detection.” Frontiers in Optics / Laser Science (2018), Paper FW6C.5, September 16, 2018, FW6C.5. https://doi.org/10.1364/FIO.2018.FW6C.5.https://doi.org/10.1364/FIO.2018.FW6C.5http://hdl.handle.net/11603/38531Frontiers in Optics 2018 Washington, DC United StatesThree sets of Lorentz-Drude parameters are determined to describe anisotropic optical constants of ReS₂. Photodetector sensitivity and photoluminescence efficiency of ReS₂ coated SiO₂/Si substrates are studied. For ultra-thin applications, metal nanoparticles embedded in Si yield best performance.2 pagesen-USThis item is likely protected under Title 17 of the U.S. Copyright Law. Unless on a Creative Commons license, for uses protected by Copyright Law, contact the copyright holder or the author.Thin filmsOptical constantsPhotoluminescenceMetal nanoparticlesPhotodetectorsAnisotropyUMBC Computational Photonics LaboratoryField Effect Transistors Deploying Anisotropic Two-Dimensional Materials for Light Generation and DetectionText