Field localization and enhancement of phase-locked second- and third-order harmonic generation in absorbing semiconductor cavities
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Date
2009-10-26
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Citation of Original Publication
Roppo, V.; et al.; Field localization and enhancement of phase-locked second- and third-order harmonic generation in absorbing semiconductor cavities; Physical Review A 80, 043834 (2009); https://journals.aps.org/pra/abstract/10.1103/PhysRevA.80.043834
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This work was written as part of one of the author's official duties as an Employee of the United States Government and is therefore a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.
Public Domain Mark 1.0
This work was written as part of one of the author's official duties as an Employee of the United States Government and is therefore a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.
Subjects
Abstract
We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650 and 433 nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics resonate inside the cavity and become amplified leading to relatively large conversion efficiencies. Field localization thus plays a pivotal role despite the presence of absorption, and ushers in a new class of semiconductor-based devices in the visible and uv ranges.