Keeping 2D materials visible even buried in SoI wafers

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https://www.spiedigitallibrary.org/conference-proceedings-of-spie/9752/97520R/Keeping-2D-materials-visible-even-buried-in-SoI-wafers/10.1117/12.2213085.full

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https://doi.org/10.1117/12.2213085
 http://hdl.handle.net/11603/38564

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UMBC Data Science
UMBC Computer Science and Electrical Engineering Department

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https://orcid.org/0000-0001-9075-7071

Date

2016-03-14

Type of Work

conference papers and proceedings
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Citation of Original Publication

Simsek, Ergun, and Bablu Mukherjee. “Keeping 2D Materials Visible Even Buried in SoI Wafers.” Silicon Photonics XI 9752 (March 14, 2016): 119–24. https://doi.org/10.1117/12.2213085.

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©2016 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

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UMBC Computational Photonics Laboratory

Abstract

In order to protect optoelectronic and mechanical properties of atomically thin layered materials (ATLMs) fabricated over SiO₂/Si substrates, a secondary oxide or nitride layer can be capped over. However, such protective capping might decrease ATLMs’ visibility dramatically. Similar to the early studies conducted for graphene, we numerically determine optimum thicknesses both for capping and underlying oxide layers for strongest visibility of monolayer MoS₂, MoSe₂, WS₂, and WSe₂ in different regions of visible spectrum. We find that the capping layer should not be thicker than 60 nm. Furthermore the optimum capping layer thickness value can be calculated as a function of underlying oxide thickness, and vice versa.