Complex electrical permittivity of the monolayer molybdenum disulfide (MoS₂) in near UV and visible

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dc.contributor.authorMukherjee, Bablu
dc.contributor.authorTseng, Frank
dc.contributor.authorGunlycke, Daniel
dc.contributor.authorAmara, Kiran Kumar
dc.contributor.authorEda, Goki
dc.contributor.authorSimsek, Ergun
dc.date.accessioned2025-06-05T14:03:42Z
dc.date.available2025-06-05T14:03:42Z
dc.date.issued2015-02-01
dc.description.abstractTemperature and Fermi energy dependent exciton eigenenergies of monolayer molybdenum disulfide (MoS₂) are calculated using an atomistic model. These exciton eigen-energies are used as the resonance frequencies of a hybrid Lorentz-Drude-Gaussian model, in which oscillation strengths and damping coefficients are obtained from the experimental results for the differential transmission and reflection spectra of monolayer MoS₂ coated quartz and silicon substrates, respectively. Numerical results compared to experimental results found in the literature reveal that the developed permittivity model can successfully represent the monolayer MoS₂ under different biasing conditions at different temperatures for the design and simulation of MoS₂ based opto-electronic devices.
dc.description.sponsorshipThis work has been funded by the Office of Naval Research ONR directly and through the Naval Research Laboratory NRL E S and F T acknowledge support from NRL through the ONR Summer Faculty Program and the NRC Research Associateship Program respectively
dc.description.urihttps://opg.optica.org/ome/abstract.cfm?uri=ome-5-2-447
dc.format.extent9 pages
dc.genrejournal articles
dc.identifierdoi:10.13016/m2piwg-qffb
dc.identifier.citationMukherjee, Bablu, Frank Tseng, Daniel Gunlycke, Kiran Kumar Amara, Goki Eda, and Ergun Simsek. “Complex Electrical Permittivity of the Monolayer Molybdenum Disulfide (MoS₂) in near UV and Visible.” Optical Materials Express 5, no. 2 (February 1, 2015): 447–55. https://doi.org/10.1364/OME.5.000447.
dc.identifier.urihttps://doi.org/10.1364/OME.5.000447
dc.identifier.urihttp://hdl.handle.net/11603/38744
dc.language.isoen_US
dc.publisherOptica
dc.relation.isAvailableAtThe University of Maryland, Baltimore County (UMBC)
dc.relation.ispartofUMBC Data Science
dc.relation.ispartofUMBC Computer Science and Electrical Engineering Department
dc.rightsThis work was written as part of one of the author's official duties as an Employee of the United States Government and is therefore a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.
dc.rightsPublic Domain
dc.rights.urihttps://creativecommons.org/publicdomain/mark/1.0/
dc.subjectThin films
dc.subjectPhotoconductivity
dc.subjectRed shift
dc.subjectPermittivity
dc.subjectReflection coefficient
dc.subjectOptical properties
dc.subjectUMBC Computational Photonics Laboratory
dc.titleComplex electrical permittivity of the monolayer molybdenum disulfide (MoS₂) in near UV and visible
dc.typeText
dcterms.creatorhttps://orcid.org/0000-0001-9075-7071

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