Modeling and simulation of atomic layer deposition at the feature scale

dc.contributor.authorGobbert, Matthias
dc.contributor.authorPrasad, Vinay
dc.contributor.authorCale, Timothy S.
dc.date.accessioned2025-08-13T20:14:29Z
dc.date.issued2002-06-05
dc.description.abstractWe present a transient Boltzmann equation based transport and reaction model for atomic layer deposition (ALD) at the feature scale. The transport model has no adjustable parameters. In this article, we focus on the reaction step and the postreaction purge steps of ALD. The heterogeneous chemistry model consists of reversible adsorption of a reactant on a single site, and irreversible reaction of a second gaseous reactant with the adsorbed reactant. We conduct studies on the effect of the kinetic rate parameter associated with the reaction. We provide results for number densities of gaseous species, fluxes to the surface of the feature, and surface coverage of the adsorbing reactant as functions of time. For reasonable reaction rate parameter values, the time scale for gas transport is much smaller than that for reaction and desorption. For these cases, an analytic expression for the time evolution of the surface coverage of the adsorbing reactant provides a good approximation to the solution obtained from the transport and reaction model. The results show that fractional coverage of the adsorbing reactant reduces significantly in the reaction step due to reaction with the gaseous reactant and desorption. Larger values of the reaction rate parameter lead to larger reductions in the fractional coverage during the reaction step. For smaller values of the reaction rate parameter, the decrease in coverage is dominated by desorption. The surface coverage of the adsorbing reactant also decreases during purge steps, due to desorption.
dc.description.sponsorshipProfessor Gobbert acknowledges support from the NSF under Grant No. DMS-9805547. The RPI authors acknowledge support from MARCO, DARPA, and NYSTAR. We are also thankful to C. Ringhofer and J.-F. Remacle, without whose help this work would not have been possible.
dc.description.urihttps://pubs.aip.org/avs/jvb/article-abstract/20/3/1031/593016/Modeling-and-simulation-of-atomic-layer-deposition?redirectedFrom=fulltext
dc.format.extent13 pages
dc.genrejournal articles
dc.identifierdoi:10.13016/m2weli-dhi0
dc.identifier.citationGobbert, Matthias K., Vinay Prasad, and Timothy S. Cale. “Modeling and Simulation of Atomic Layer Deposition at the Feature Scale.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 20, no. 3 (2002): 1031–43. https://doi.org/10.1116/1.1481754.
dc.identifier.urihttps://doi.org/10.1116/1.1481754
dc.identifier.urihttp://hdl.handle.net/11603/39767
dc.language.isoen
dc.publisherAIP
dc.relation.isAvailableAtThe University of Maryland, Baltimore County (UMBC)
dc.relation.ispartofUMBC Mathematics and Statistics Department
dc.relation.ispartofUMBC Faculty Collection
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Gobbert, Matthias K., Vinay Prasad, and Timothy S. Cale. “Modeling and Simulation of Atomic Layer Deposition at the Feature Scale.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 20, no. 3 (2002): 1031–43. https://doi.org/10.1116/1.1481754. and may be found at https://pubs.aip.org/avs/jvb/article-abstract/20/3/1031/593016/Modeling-and-simulation-of-atomic-layer-deposition?redirectedFrom=fulltext.
dc.titleModeling and simulation of atomic layer deposition at the feature scale
dc.typeText
dcterms.creatorhttps://orcid.org/0000-0003-1745-2292

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