Sources of nonlinearity in a PIN photodetector at high applied reverse bias

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Sources_of_nonlinearity_in_a_PIN_photodetector_at_high_applied_reverse_bias.pdf (832.39 KB)

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https://ieeexplore.ieee.org/abstract/document/6724076/

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https://doi.org/10.1109/MWP.2013.6724076
 http://hdl.handle.net/11603/38830

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UMBC Computer Science and Electrical Engineering Department
UMBC Student Collection

Author/Creator

Author/Creator ORCID

https://orcid.org/0000-0002-0004-6784
 https://orcid.org/0000-0003-0269-8433

Date

2013-10

Type of Work

conference papers and proceedings
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Department

Program

Citation of Original Publication

Hu, Yue, Curtis R. Menyuk, Vincent J. Urick, and Keith J. Williams. “Sources of Nonlinearity in a PIN Photodetector at High Applied Reverse Bias.” In 2013 IEEE International Topical Meeting on Microwave Photonics (MWP), 282–85, 2013. https://doi.org/10.1109/MWP.2013.6724076.

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This work was written as part of one of the author's official duties as an Employee of the United States Government and is therefore a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.
Public Domain

Subjects

PIN photodiodes
Impact ionization
UMBC Optical Fiber Communications Laboratory
UMBC High Performance Computing Facility (HPCF)
UMBC High Performance Computing Facility (HPCF)
UMBC Optical Fiber Communications Laboratory
Power system harmonics
Charge carrier processes
Harmonic analysis
Semiconductor process modeling

Abstract

One-dimensional (1D) and two-dimensional (2D) drift-diffusion models were created to investigate the sources of nonlinearity in a high-current p-i-n photodetector. Incomplete ionization, an external circuit, and impact ionization are all included in the model. We achieve good agreement with the experimental data with both the 1D and 2D model. We show that impact ionization is the dominant source of device nonlinearity at large applied reverse bias. The electron and hole current contributions to the second harmonic power were calculated. We find that the impact ionization is more important for the electrons. We also find that the hole velocity saturates slowly with increasing reverse bias, and the hole current makes a large contribution to the harmonic power at 10 V. This result implies that decreasing the hole injection will decrease the harmonic power.