Ultralow threshold laser using a single quantum dot and a microsphere cavity

dc.contributor.authorPelton, Matthew
dc.contributor.authorYamamoto, Yoshihisa
dc.date.accessioned2023-08-15T18:31:39Z
dc.date.available2023-08-15T18:31:39Z
dc.date.issued1999-03-01
dc.description.abstractWe propose a novel semiconductor microlaser, made by capturing the light emitted from a single InAs/GaAs quantum dot in the whispering-gallery mode of a glass microsphere. We demonstrate that such an arrangement allows the laser threshold condition to be satisfied. The corresponding threshold current should be several orders of magnitude lower than is currently possible in semiconductor lasers.en_US
dc.description.sponsorshipWe would like to thank O. Benson, G. Solomon, J. Kim, and G. Klimovitch for valuable discussions. Financial assistance for M.P. was provided by Stanford University.en_US
dc.description.urihttps://journals.aps.org/pra/abstract/10.1103/PhysRevA.59.2418en_US
dc.format.extent4 pagesen_US
dc.genrejournal articlesen_US
dc.identifierdoi:10.13016/m2pixy-z7lq
dc.identifier.citationPelton, Matthew, and Yoshihisa Yamamoto. “Ultralow Threshold Laser Using a Single Quantum Dot and a Microsphere Cavity.” Physical Review A 59, no. 3 (March 1, 1999): 2418–21. https://doi.org/10.1103/PhysRevA.59.2418.en_US
dc.identifier.urihttps://doi.org/10.1103/PhysRevA.59.2418
dc.identifier.urihttp://hdl.handle.net/11603/29242
dc.language.isoen_USen_US
dc.publisherAPSen_US
dc.relation.isAvailableAtThe University of Maryland, Baltimore County (UMBC)
dc.relation.ispartofUMBC Physics Department Collection
dc.rights©1999 American Physical Societyen_US
dc.titleUltralow threshold laser using a single quantum dot and a microsphere cavityen_US
dc.typeTexten_US
dcterms.creatorhttps://orcid.org/0000-0002-6370-8765en_US

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