Ultralow threshold laser using a single quantum dot and a microsphere cavity

dc.contributor.authorPelton, Matthew
dc.contributor.authorYamamoto, Yoshihisa
dc.date.accessioned2023-08-15T18:31:39Z
dc.date.available2023-08-15T18:31:39Z
dc.date.issued1999-03-01
dc.description.abstractWe propose a novel semiconductor microlaser, made by capturing the light emitted from a single InAs/GaAs quantum dot in the whispering-gallery mode of a glass microsphere. We demonstrate that such an arrangement allows the laser threshold condition to be satisfied. The corresponding threshold current should be several orders of magnitude lower than is currently possible in semiconductor lasers.en
dc.description.sponsorshipWe would like to thank O. Benson, G. Solomon, J. Kim, and G. Klimovitch for valuable discussions. Financial assistance for M.P. was provided by Stanford University.en
dc.description.urihttps://journals.aps.org/pra/abstract/10.1103/PhysRevA.59.2418en
dc.format.extent4 pagesen
dc.genrejournal articlesen
dc.identifierdoi:10.13016/m2pixy-z7lq
dc.identifier.citationPelton, Matthew, and Yoshihisa Yamamoto. “Ultralow Threshold Laser Using a Single Quantum Dot and a Microsphere Cavity.” Physical Review A 59, no. 3 (March 1, 1999): 2418–21. https://doi.org/10.1103/PhysRevA.59.2418.en
dc.identifier.urihttps://doi.org/10.1103/PhysRevA.59.2418
dc.identifier.urihttp://hdl.handle.net/11603/29242
dc.language.isoenen
dc.publisherAPSen
dc.relation.isAvailableAtThe University of Maryland, Baltimore County (UMBC)
dc.relation.ispartofUMBC Physics Department Collection
dc.rights©1999 American Physical Societyen
dc.titleUltralow threshold laser using a single quantum dot and a microsphere cavityen
dc.typeTexten
dcterms.creatorhttps://orcid.org/0000-0002-6370-8765en

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