Effect of Doping on the Electrical Characteristics of ZnSe
| dc.contributor.author | Singh, Narsingh Bahadur | |
| dc.contributor.author | Su, Ching-Hua | |
| dc.contributor.author | Choa, Fow-Sen | |
| dc.contributor.author | Arnold, Bradley | |
| dc.contributor.author | Gill, Puneet | |
| dc.contributor.author | Su, Charmain | |
| dc.contributor.author | Emge, Ian | |
| dc.contributor.author | Sood, Rachit | |
| dc.date.accessioned | 2020-08-06T14:33:17Z | |
| dc.date.available | 2020-08-06T14:33:17Z | |
| dc.date.issued | 2020-06-27 | |
| dc.description.abstract | The effect of sulfur, iron, and chromium doping on the electrical characteristics of ZnSe single crystals was studied. The crystals, grown by the physical vapor transport method (PVT) at NASA Marshall Space Flight Center, were characterized by measuring electrical resistivity, capacitance, and dielectric constant using LCR meter. The morphology was studied by scanning electron microscopy to determine the crystallinity and micro defects. The measured resistivity and dielectric constant showed tunability as the function of frequency in the range of 100 Hz to 100,000 Hz, indicating the suitability of doped material for tuning devices. Besides, for the range from 50 mV to 1000mV, there was no difference in values for the studied frequency range, indicating no degradation or breakdown in the material. All doped ZnSe crystals with sulfur, iron, and chromium showed a similar trend as the function of frequency. Cr-ZnSe showed very high resistivity and lower dielectric constant compared to S-ZnSe and Fe-ZnSe crystals. | en_US |
| dc.description.sponsorship | This research was patially funded by NASA/Marshall Space Flight Center through a purchase order for services #80NSSC19P1269. | en_US |
| dc.description.uri | https://www.mdpi.com/2073-4352/10/7/551/htm | en_US |
| dc.format.extent | 11 pages | en_US |
| dc.genre | journal articles | en_US |
| dc.identifier | doi:10.13016/m2ncyx-o9tx | |
| dc.identifier.citation | Singh, Narsingh Bahadur; Su, Ching-Hua; Choa, Fow-Sen; Arnold, Bradley; Gill, Puneet; Su, Charmain; Emge, Ian; Sood, Rachit; Effect of Doping on the Electrical Characteristics of ZnSe; Crystals 2020, 10(7), 551; https://www.mdpi.com/2073-4352/10/7/551/htm | en_US |
| dc.identifier.uri | https://doi.org/10.3390/cryst10070551 | |
| dc.identifier.uri | http://hdl.handle.net/11603/19341 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | MDPI | en_US |
| dc.relation.isAvailableAt | The University of Maryland, Baltimore County (UMBC) | |
| dc.relation.ispartof | UMBC Computer Science and Electrical Engineering Department Collection | |
| dc.relation.ispartof | UMBC Student Collection | |
| dc.relation.ispartof | UMBC Faculty Collection | |
| dc.rights | This item is likely protected under Title 17 of the U.S. Copyright Law. Unless on a Creative Commons license, for uses protected by Copyright Law, contact the copyright holder or the author. | |
| dc.rights | Attribution 4.0 International (CC BY 4.0) | * |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | * |
| dc.title | Effect of Doping on the Electrical Characteristics of ZnSe | en_US |
| dc.type | Text | en_US |