Growth of nonlinear optical thin films of KTa₁₋ₓNbₓO₃ on GaAs by pulsed laser deposition for integrated optics
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Knauss, L. A., K. S. Harshavardhan, H.-M. Christen, et al. “Growth of Nonlinear Optical Thin Films of KTa₁₋ₓNbₓO₃ on GaAs by Pulsed Laser Deposition for Integrated Optics.” Applied Physics Letters 73, no. 26 (1998): 3806–8. https://doi.org/10.1063/1.122900.
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This work was written as part of one of the author's official duties as an Employee of the United States Government and is therefore a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.
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Abstract
We report successful deposition of epitaxial nonlinear KTa₀.₅₂Nb₀.₄₈O₃ (KTN) films on (100) GaAs substrates. A buffer layer scheme consisting of epitaxial MgO and SrTiO₃ buffer layers and a Si₃Ni₄ encapsulation of the substrate was developed to alleviate chemical and structural incompatibilities between the GaAs substrate and KTN film at the growth temperature (~750°C). The structure, composition, and preliminary optical properties of the KTN films were evaluated by four-circle x-ray diffraction, Rutherford backscattering spectrometry, and prism coupled optical waveguide mode measurements, respectively. We observed sharp and distinguishable transverse electric and transverse magnetic propagating modes in the KTN films, and measured the refractive index (n₀) of the film at 488 nm to be 2.275 which is close to the bulk value of 2.35, all of which indicates a high structural and optical film quality.