Using dark states for exciton storage in transition-metal dichalcogenides

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https://iopscience.iop.org/article/10.1088/0953-8984/28/3/034005

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http://dx.doi.org/10.1088/0953-8984/28/3/034005
 http://hdl.handle.net/11603/38684

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UMBC Data Science
UMBC Computer Science and Electrical Engineering Department

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https://orcid.org/0000-0001-9075-7071

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2015-12-24

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journal articles
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Tseng, Frank, Ergun Simsek, and Daniel Gunlycke. “Using Dark States for Exciton Storage in Transition-Metal Dichalcogenides.” Journal of Physics: Condensed Matter 28 (December 24, 2015). https://doi.org/10.1088/0953-8984/28/3/034005.

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This work was written as part of one of the author's official duties as an Employee of the United States Government and is therefore a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.
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UMBC Computational Photonics Laboratory

Abstract

We explore the possibility of storing excitons in excitonic dark states in monolayer semiconducting transition-metal dichalcogenides. In addition to being optically inactive, these dark states require the electron and hole to be spatially separated, thus inhibiting electron/hole recombination and allowing exciton lifetimes to be extended. Based on an atomistic exciton model, we derive transition matrix elements and an approximate selection rule showing that excitons could be transitioned into and out of dark states using a pulsed infrared laser. For illustration, we also present exciton population scenarios based on a population analysis for different recombination decay constants. Longer exciton lifetimes could make these materials candidates for applications in energy management and quantum information processing.