Low Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Flux

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dc.contributor.authorSingh, N. B.
dc.contributor.authorRai, Raghaw S.
dc.date.accessioned2021-10-07T14:44:29Z
dc.date.available2021-10-07T14:44:29Z
dc.date.issued2021-07-24
dc.description.abstractAl - 12% Si alloy system was used as nutrient flux to grow silicon carbide at low temperature by reactive flux growth. Thick films were grown below 900oC on a SiC substrate having Al-Si melt rotated with a speed of 30rpm in a graphite cruciblein nitrogen atmosphere. A constant 2 atmospheric pressure of nitrogen was used on the melt. Using longer soak time of the melt in the presence of carbon impurity, the destruction of dendritic morphology was observed that subsequently resulted into the formation of cellular, colony and facetted crystal morphology. Photoluminescence data from film showed SiC with higher band gap in the presence of aluminum nitride.en_US
dc.description.urihttps://gexinonline.com/uploads/articles/article-crmc-111.pdfen_US
dc.format.extent8 pagesen_US
dc.genrejournal articlesen_US
dc.identifier.citationSingh, N. B.; Rai, Raghaw S.; Low Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Flux; Current Research in Materials Chemistry, 3(1): 111, 24 July, 2021; https://doi.org/10.33790/crmc1100111en_US
dc.identifier.urihttps://doi.org/10.33790/crmc1100111
dc.identifier.urihttp://hdl.handle.net/11603/23061
dc.language.isoen_USen_US
dc.publisherGexin Publicationsen_US
dc.relation.isAvailableAtThe University of Maryland, Baltimore County (UMBC)
dc.relation.ispartofUMBC Chemistry & Biochemistry Department Collection
dc.relation.ispartofUMBC Faculty Collection
dc.relation.ispartofUMBC Computer Science and Electrical Engineering Department
dc.rightsThis item is likely protected under Title 17 of the U.S. Copyright Law. Unless on a Creative Commons license, for uses protected by Copyright Law, contact the copyright holder or the author.en_US
dc.titleLow Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Fluxen_US
dc.typeTexten_US

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