Low Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Flux
| dc.contributor.author | Singh, N. B. | |
| dc.contributor.author | Rai, Raghaw S. | |
| dc.date.accessioned | 2021-10-07T14:44:29Z | |
| dc.date.available | 2021-10-07T14:44:29Z | |
| dc.date.issued | 2021-07-24 | |
| dc.description.abstract | Al - 12% Si alloy system was used as nutrient flux to grow silicon carbide at low temperature by reactive flux growth. Thick films were grown below 900oC on a SiC substrate having Al-Si melt rotated with a speed of 30rpm in a graphite cruciblein nitrogen atmosphere. A constant 2 atmospheric pressure of nitrogen was used on the melt. Using longer soak time of the melt in the presence of carbon impurity, the destruction of dendritic morphology was observed that subsequently resulted into the formation of cellular, colony and facetted crystal morphology. Photoluminescence data from film showed SiC with higher band gap in the presence of aluminum nitride. | en |
| dc.description.uri | https://gexinonline.com/uploads/articles/article-crmc-111.pdf | en |
| dc.format.extent | 8 pages | en |
| dc.genre | journal articles | en |
| dc.identifier.citation | Singh, N. B.; Rai, Raghaw S.; Low Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Flux; Current Research in Materials Chemistry, 3(1): 111, 24 July, 2021; https://doi.org/10.33790/crmc1100111 | en |
| dc.identifier.uri | https://doi.org/10.33790/crmc1100111 | |
| dc.identifier.uri | http://hdl.handle.net/11603/23061 | |
| dc.language.iso | en | en |
| dc.publisher | Gexin Publications | en |
| dc.relation.isAvailableAt | The University of Maryland, Baltimore County (UMBC) | |
| dc.relation.ispartof | UMBC Chemistry & Biochemistry Department Collection | |
| dc.relation.ispartof | UMBC Faculty Collection | |
| dc.relation.ispartof | UMBC Computer Science and Electrical Engineering Department | |
| dc.rights | This item is likely protected under Title 17 of the U.S. Copyright Law. Unless on a Creative Commons license, for uses protected by Copyright Law, contact the copyright holder or the author. | en |
| dc.title | Low Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Flux | en |
| dc.type | Text | en |