Single-mode Spontaneous Emission from a Single Quantum Dot in a Three-Dimensional Microcavity

dc.contributor.authorSolomon, G. S.
dc.contributor.authorPelton, Matthew
dc.contributor.authorYamamoto, Y.
dc.date.accessioned2023-08-15T18:32:19Z
dc.date.available2023-08-15T18:32:19Z
dc.date.issued2001-04-23
dc.description.abstractThe spontaneous emission from an isolated semiconductor quantum dot state has been coupled with high efficiency to a single, polarization-degenerate cavity mode. The InAs quantum dot is epitaxially formed and embedded in a planar epitaxial microcavity, which is processed into a post of submicron diameter. The single quantum dot spontaneous emission lifetime is reduced from the noncavity value of 1.3 ns to 280 ps, resulting in a single-mode spontaneous emission coupling efficiency of 78%.en_US
dc.description.sponsorshipStanford University provided financial assistance for M. P. The Army Research Office provided partial financial assistance for G. S. S.en_US
dc.description.urihttps://journals.aps.org/prl/abstract/10.1103/PhysRevLett.86.3903en_US
dc.format.extent4 pagesen_US
dc.genrejournal articlesen_US
dc.identifierdoi:10.13016/m2uful-aoua
dc.identifier.citationSolomon, G. S., M. Pelton, and Y. Yamamoto. “Single-Mode Spontaneous Emission from a Single Quantum Dot in a Three-Dimensional Microcavity.” Physical Review Letters 86, no. 17 (April 23, 2001): 3903–6. https://doi.org/10.1103/PhysRevLett.86.3903.en_US
dc.identifier.urihttps://doi.org/10.1103/PhysRevLett.86.3903
dc.identifier.urihttp://hdl.handle.net/11603/29245
dc.language.isoen_USen_US
dc.publisherAPSen_US
dc.relation.isAvailableAtThe University of Maryland, Baltimore County (UMBC)
dc.relation.ispartofUMBC Physics Department Collection
dc.rights©2001 American Physical Societyen_US
dc.titleSingle-mode Spontaneous Emission from a Single Quantum Dot in a Three-Dimensional Microcavityen_US
dc.title.alternativeSingle-mode spontaneous emission from a single quantum dot in a micropost microcavityen_US
dc.typeTexten_US
dcterms.creatorhttps://orcid.org/0000-0002-6370-8765en_US

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