Fabrication of silicon W and G center embedded light-emitting diodes for electroluminescence

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dc.contributor.authorEbadollahi, Nikki
dc.contributor.authorNamboodiri, Pradeep N.
dc.contributor.authorPederson, Christian
dc.contributor.authorVeetil, Vijin Kizhake
dc.contributor.authorDavanco, Marcelo I.
dc.contributor.authorSrinivasan, Kartik A.
dc.contributor.authorKatzenmeyer, Aaron M.
dc.contributor.authorPelton, Matthew
dc.contributor.authorPomeroy, Joshua M.
dc.date.accessioned2025-06-05T14:04:03Z
dc.date.available2025-06-05T14:04:03Z
dc.date.issued2024-11-20
dc.description.abstractThe need for reliable quantum light sources drives our research to study color centers (CCs) in silicon as telecommunication O-band emitters. Building from photoluminescence measurements, we compare new electroluminescence measurements. To this end, we synthesized CC-embedded p-i-n junctions in silicon, creating CC light-emitting diode devices. The two types of CCs synthesized were G-centers and W-centers, which show zero-phonon lines at approximately 1279 nm and 1218 nm, respectively. Here, we present our device design, fabrication process flow, and report on the device performance results from measurements to date.
dc.description.urihttps://pubs.aip.org/avs/jvb/article-abstract/42/6/062208/3321484/Fabrication-of-silicon-W-and-G-center-embedded?redirectedFrom=fulltext
dc.format.extent17 pages
dc.genrejournal articles
dc.genrepostprints
dc.identifierdoi:10.13016/m2fxzj-zcyz
dc.identifier.citationEbadollahi, Nikki, Pradeep N. Namboodiri, Christian Pederson, Vijin K. Veetil, Marcelo I. Davanco, Kartik A. Srinivasan, Aaron M. Katzenmeyer, Matthew Pelton, and Joshua M. Pomeroy. "Fabrication of Silicon W and G Center Embedded Light-Emitting Diodes for Electroluminescence". Journal of Vacuum Science & Technology B 42, no. 6 (20 November 2024): 062208. https://doi.org/10.1116/6.0004055.
dc.identifier.urihttps://doi.org/10.1116/6.0004055
dc.identifier.urihttp://hdl.handle.net/11603/38790
dc.language.isoen_US
dc.publisherAIP
dc.relation.isAvailableAtThe University of Maryland, Baltimore County (UMBC)
dc.relation.ispartofUMBC Physics Department
dc.relation.ispartofUMBC Faculty Collection
dc.relation.ispartofUMBC Student Collection
dc.rightsThis work was written as part of one of the author's official duties as an Employee of the United States Government and is therefore a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.
dc.rightsPublic Domain
dc.rights.urihttps://creativecommons.org/publicdomain/mark/1.0/
dc.subjectPIN diode
dc.subjectCrystallographic defects
dc.subjectElectroluminescence
dc.subjectPhotoluminescence
dc.subjectSpectroscopy
dc.subjectLight emitting diodes
dc.subjectPhotodiodes
dc.subjectChemical elements
dc.subjectQuantum information
dc.subjectTelecommunications
dc.titleFabrication of silicon W and G center embedded light-emitting diodes for electroluminescence
dc.typeText
dcterms.creatorhttps://orcid.org/0000-0002-6370-8765
dcterms.creatorhttps://orcid.org/0000-0002-6338-0835

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