Field Effect Transistors Deploying Anisotropic Two-Dimensional Materials for Light Generation and Detection

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https://opg.optica.org/abstract.cfm?uri=FiO-2018-FW6C.5

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https://doi.org/10.1364/FIO.2018.FW6C.5
 http://hdl.handle.net/11603/38531

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UMBC Data Science
UMBC Computer Science and Electrical Engineering Department
UMBC Faculty Collection

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Author/Creator ORCID

https://orcid.org/0000-0001-9075-7071

Date

2018-09-16

Type of Work

conference papers and proceedings
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Citation of Original Publication

Simsek, Ergun, Mengqing Yuan, and Qing H. Liu. “Field Effect Transistors Deploying Anisotropic Two-Dimensional Materials for Light Generation and Detection.” Frontiers in Optics / Laser Science (2018), Paper FW6C.5, September 16, 2018, FW6C.5. https://doi.org/10.1364/FIO.2018.FW6C.5.

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Subjects

Thin films
Optical constants
Photoluminescence
Metal nanoparticles
Photodetectors
Anisotropy
UMBC Computational Photonics Laboratory

Abstract

Three sets of Lorentz-Drude parameters are determined to describe anisotropic optical constants of ReS₂. Photodetector sensitivity and photoluminescence efficiency of ReS₂ coated SiO₂/Si substrates are studied. For ultra-thin applications, metal nanoparticles embedded in Si yield best performance.