Surface functionalization and atomic layer deposition of metal oxides on MoS₂ surfaces
dc.contributor.author | Gougousi, Theodosia | |
dc.contributor.author | Kropp, Jaron A. | |
dc.contributor.author | Ataca, Can | |
dc.date.accessioned | 2024-11-14T15:18:47Z | |
dc.date.available | 2024-11-14T15:18:47Z | |
dc.date.issued | 2024-10-02 | |
dc.description | Proceedings Volume 13114, Low-Dimensional Materials and Devices, 18-23 AUGUST 2024, San Diego, California, United States | |
dc.description.abstract | Transition metal dichalcogenides (TMDs), such as MoS₂, have attracted considerable interest in the field of nanoelectronics due to their unique properties. These layered materials possess a hexagonal structure similar to graphene and exhibit semiconducting behavior, making them ideal candidates for channel materials in field-effect transistors (FETs). However, integrating these channel materials into devices requires the fabrication of a high-quality interface between the TMD and a deposited dielectric layer. The sulfur-terminated MoS₂ surface is hydrophobic, and typical films deposited via atomic layer deposition (ALD) often exhibit a high concentration of pinhole-type defects. To improve the compatibility of MoS₂ with ALD processes, we investigated the effect of seeding the surface with HAuCl₄ salts. These chloride-terminated complexes are expected to react with H₂O, resulting in a hydroxyl-terminated surface that is conducive to a well-behaved ALD process. Following surface treatment, ALD titania and alumina films were deposited using tetrakis (dimethylamino) titanium and trimethylaluminum as the metal-organic precursors, with H₂O serving as the oxidizer. Raman spectroscopy confirmed that the surface treatment did not compromise the structural integrity of MoS₂. X-ray photoelectron spectroscopy measurements verified the presence of gold and aluminum on the surface and the successful removal of chlorine during the process. Atomic force microscopy revealed that the HAuCl₄ treatment influenced the titania film nucleation and morphology; however, 6 nm titania films deposited at 100°C and 200°C still exhibited some pinholes. | |
dc.description.sponsorship | We are grateful to Prof. Wenjuan Zhu from the University of Illinois at Urbana Champaign and Drs James Maslar and Berc Kalanyan at NIST for providing the single flake and nanostructured MoS2 starting surfaces respectively. We are also grateful to Dr. Karen Gaskell from the University of Maryland for assistance with the XPS and micro-Raman data. We thank Erik Crowe for assistance with the AFM. This work was partially supported by the National Science Foundation under grant ECCS-1407677. | |
dc.description.uri | https://www.spiedigitallibrary.org/conference-proceedings-of-spie/13114/131140B/Surface-functionalization-and-atomic-layer-deposition-of-metal-oxides-on/10.1117/12.3028875.full | |
dc.format.extent | 9 pages | |
dc.genre | conference papers and proceedings | |
dc.genre | presentations (communicative events) | |
dc.identifier | doi:10.13016/m218hv-4c9v | |
dc.identifier.citation | Gougousi, Theodosia, Jaron A. Kropp, and Can Ataca. “Surface Functionalization and Atomic Layer Deposition of Metal Oxides on MoS₂ Surfaces.” Low-Dimensional Materials and Devices 2024 13114 (October 2, 2024): 59–67. https://doi.org/10.1117/12.3028875. | |
dc.identifier.uri | https://doi.org/10.1117/12.3028875 | |
dc.identifier.uri | http://hdl.handle.net/11603/36962 | |
dc.language.iso | en_US | |
dc.publisher | SPIE | |
dc.relation.isAvailableAt | The University of Maryland, Baltimore County (UMBC) | |
dc.relation.ispartof | UMBC Physics Department | |
dc.relation.ispartof | UMBC Faculty Collection | |
dc.relation.ispartof | UMBC Student Collection | |
dc.rights | ©2024 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited | |
dc.subject | UMBC Simulation, Theory and Engineering of Advanced Materials Laboratory (STEAM Lab) | |
dc.subject | UMBC Materials Physics Lab | |
dc.title | Surface functionalization and atomic layer deposition of metal oxides on MoS₂ surfaces | |
dc.type | Text | |
dcterms.creator | https://orcid.org/0000-0001-6396-9706 | |
dcterms.creator | https://orcid.org/0000-0003-4959-1334 |