Distorted perovskites for high voltage dielectric capacitors
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Author/Creator ORCID
Date
2019-05-13
Type of Work
Department
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Citation of Original Publication
Puneet Gill, et.al, Distorted perovskites for high voltage dielectric capacitors, Proceedings Volume 10979, Energy Harvesting and Storage: Materials, Devices, and Applications IX; 109790F (2019) https://doi.org/10.1117/12.2516044
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© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Subjects
Abstract
There are several mechanisms which have been proposed for the existence of colossal dielectric constant in the class
of perovskite calcium copper titanate (CaCu₃Ti₄O₁₂ or CCTO) materials. Researches indicate that existence of
twinning parallel to (100) (001) and (010) planes causes planar defects and causes changes in local electronic
structure. This change can cause insulating barriers locally which contribute to the large dielectric values irrespective
of processing. The combination of insulating barriers, defects and displacements caused by twinning have been
attributed to the generation of large dielectric constant in CCTO. To examine some of these arguments some
researchers replaced Ca with other elements and evaluated this concept. In this study we present the synthesis and
characterization of Ga₂/₃CaCu₃Ti₄O₁₂₋ₓNₓ (GCTON) material. This provides both distortion due to atomic size
difference and defects due to insertion of nitrogen. The morphology of the compound was determined to show that
processing has tremendous effect on the dielectric values. The resistivity of GCTON was several order higher than
CCTO and dielectric constant was higher than 10,000.