Defect and transport properties of nanocrystalline CeO2−x
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Y.‐M. Chiang, E. B. Lavik, I. Kosacki, H. L. Tuller, and J. Y. Ying, Defect and transport properties of nanocrystalline CeO2−x, Appl. Phys. Lett. 69, 185 (1996); https://doi.org/10.1063/1.117366
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This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Chiang et al., Defect and transport properties of nanocrystalline CeO2−x, Appl. Phys. Lett. 69, 185 (1996); https://doi.org/10.1063/1.117366 and may be found at https://doi.org/10.1063/1.117366.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Chiang et al., Defect and transport properties of nanocrystalline CeO2−x, Appl. Phys. Lett. 69, 185 (1996); https://doi.org/10.1063/1.117366 and may be found at https://doi.org/10.1063/1.117366.
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Abstract
It is shown that unique defect thermodynamics and transport properties result for oxides of a few nanometers crystallite size. Fully‐dense CeO2−x polycrystals of ∼10 nm grain size were synthesized, and their electrical properties compared with those of samples coarsened from the same material. The nanocrystals showed reduced grain boundary resistance, 104 higher electronic conductivity, and less than one‐half the heat of reduction of its coarse‐grained counterpart. These properties are attributed to a dominant role of interfacial defect formation.