Low Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Flux

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https://doi.org/10.33790/crmc1100111
 http://hdl.handle.net/11603/23061

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UMBC Chemistry & Biochemistry Department
UMBC Computer Science and Electrical Engineering Department
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2021-07-24

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journal articles
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Singh, N. B.; Rai, Raghaw S.; Low Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Flux; Current Research in Materials Chemistry, 3(1): 111, 24 July, 2021; https://doi.org/10.33790/crmc1100111

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Abstract

Al - 12% Si alloy system was used as nutrient flux to grow silicon carbide at low temperature by reactive flux growth. Thick films were grown below 900oC on a SiC substrate having Al-Si melt rotated with a speed of 30rpm in a graphite cruciblein nitrogen atmosphere. A constant 2 atmospheric pressure of nitrogen was used on the melt. Using longer soak time of the melt in the presence of carbon impurity, the destruction of dendritic morphology was observed that subsequently resulted into the formation of cellular, colony and facetted crystal morphology. Photoluminescence data from film showed SiC with higher band gap in the presence of aluminum nitride.