Low Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Flux
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Author/Creator ORCID
Date
2021-07-24
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Citation of Original Publication
Singh, N. B.; Rai, Raghaw S.; Low Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Flux; Current Research in Materials Chemistry, 3(1): 111, 24 July, 2021; https://doi.org/10.33790/crmc1100111
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Abstract
Al - 12% Si alloy system was used as nutrient flux to grow silicon
carbide at low temperature by reactive flux growth. Thick films were
grown below 900oC on a SiC substrate having Al-Si melt rotated
with a speed of 30rpm in a graphite cruciblein nitrogen atmosphere.
A constant 2 atmospheric pressure of nitrogen was used on the
melt. Using longer soak time of the melt in the presence of carbon
impurity, the destruction of dendritic morphology was observed
that subsequently resulted into the formation of cellular, colony
and facetted crystal morphology. Photoluminescence data from
film showed SiC with higher band gap in the presence of aluminum
nitride.