Design of ZnSe QPM for wide transparency sensing and laser applications

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117570S.pdf (614.16 KB)
 117570S transcript.pdf (62.03 KB)

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https://www.spiedigitallibrary.org/conference-proceedings-of-spie/11757/2585832/Design-of-ZnSe-QPM-for-wide-transparency-sensing-and-laser/10.1117/12.2585832.full?SSO=1

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https://doi.org/10.1117/12.2585832
 http://hdl.handle.net/11603/28346

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UMBC Chemistry & Biochemistry Department
UMBC Computer Science and Electrical Engineering Department
UMBC Faculty Collection
UMBC Student Collection

Author/Creator

Author/Creator ORCID

https://orcid.org/0000-0002-4646-5212
 https://orcid.org/0000-0001-9613-6110
 https://orcid.org/0000-0002-5250-8290
 https://orcid.org/0000-0002-1810-0283

Date

2021-04-22

Type of Work

conference papers and proceedings
Text

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Program

Citation of Original Publication

Rachit Sood, Hedyeh Bagherzadeh, Fow-Sen Choa, Ching Hua Su, Bradley Arnold, Eric Bowman, Brian Cullum, N. B. Singh, "Design of ZnSe QPM for wide transparency sensing and laser applications," Proc. SPIE 11757, Smart Biomedical and Physiological Sensor Technology XVIII, 117570S (22 April 2021); https://doi.org/10.1117/12.2585832

Rights

This work was written as part of one of the author's official duties as an Employee of the United States Government and is therefore a work of the United States Government. In accordance with 17 U.S.C. 105, no copyright protection is available for such works under U.S. Law.
Public Domain Mark 1.0

Subjects

Abstract

ZnSe has been a great choice for the rare-earth and transition metal doping to develop lasers. It is an excellent material for variety of optical applications due to wide transparency range, good fabricability and very low optical absorption similar to other selenides. NASA Marshall Space Flight Center has developed large crystals using physical vapor deposition (PVD) doped with transition metals for lasing. GaAs based quasi-phase matched structures have a lot of limitations including difficulty of frequency conversion from available high-power lasers. We are developing Si- and GaAs- based templates and using microfabrication process to deposit ZnSe using physical vapor transport (PVT) method. Experimental results of the fabrication of templates and growth of ZnSe on templates will be presented.