Two-qubit controlled-Z gates robust against charge noise in silicon while compensating for crosstalk using neural network

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Kanaar, David W., Utkan Güngördü, and J. P. Kestner. Two-qubit controlled-Z gates robust against charge noise in silicon while compensating for crosstalk using neural network. Physical Review B. 105, 245308 (June 21, 2022). https://journals.aps.org/prb/abstract/10.1103/PhysRevB.105.245308

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May be used only for educational or research purposes.

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Abstract

The fidelity of two-qubit gates using silicon spin qubits is limited by charge noise. When attempting to dynamically compensate for charge noise using local echo pulses, crosstalk can cause complications. We present a method of using a deep neural network to optimize the components of an analytically designed composite pulse sequence, resulting in a two-qubit gate robust against charge noise errors while also taking crosstalk into account. We analyze two experimentally motivated scenarios. For a scenario with strong EDSR driving and negligible crosstalk, the composite pulse sequence yields up to an order of magnitude improvement over a simple cosine pulse. In a scenario with moderate ESR driving and appreciable crosstalk such that simple analytical control fields are not effective, optimization using the neural network approach allows one to maintain order-of-magnitude improvement despite the crosstalk.