Fabrication of InAs quantum dots in AlAs∕GaAs DBR pillar microcavities for single photon sources

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https://pubs.aip.org/aip/jap/article-abstract/97/7/073507/390111/Fabrication-of-InAs-quantum-dots-in-AlAs-GaAs-DBR?redirectedFrom=fulltext

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https://doi.org/10.1063/1.1882764
 http://hdl.handle.net/11603/29240

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UMBC Physics Department

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https://orcid.org/0000-0002-6370-8765

Date

2005-03-21

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journal articles
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Citation of Original Publication

Bingyang Zhang, Glenn S. Solomon, Matthew Pelton, Jocelyn Plant, Charles Santori, Jelena Vučković, Yoshihisa Yamamoto; Fabrication of InAs quantum dots in AlAs∕GaAs DBR pillar microcavities for single photon sources. Journal of Applied Physics 1 April 2005; 97 (7): 073507. https://doi.org/10.1063/1.1882764

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This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Bingyang Zhang, Glenn S. Solomon, Matthew Pelton, Jocelyn Plant, Charles Santori, Jelena Vučković, Yoshihisa Yamamoto; Fabrication of InAs quantum dots in AlAs∕GaAs DBR pillar microcavities for single photon sources. Journal of Applied Physics 1 April 2005; 97 (7): 073507. https://doi.org/10.1063/1.1882764 and may be found at https://doi.org/10.1063/1.1882764.

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Abstract

We report the molecular beam epitaxy growth of low-density strain-induced InAs quantum dots (QD) embedded in an AlAs∕GaAs distributed Bragg reflector structure for a triggered photon source. By optimal selection of growth temperature, InAs deposited thickness and other experimental parameters, it is possible to grow low density (10/μm²) InAs quantum dots with a suitable emission wavelength for a triggered photon source. The empirical formulas for the refractive indices of AlAs and GaAs materials at high temperature over a wide wavelength range are constructed by combining high resolution x-ray diffraction, dynamic optical reflectivity, and optical reflectivity spectrum techniques. Utilizing the electron-beam lithography and electron-cyclotron-resonance plasma etching techniques, a micropost microcavity with the top diameter of 0.6μm and the post height of 4.2μm has been fabricated. Narrow, spectrally limited single QD emission embedded in a micropost microcavity is observed in the photoluminescence.